首页 | 本学科首页   官方微博 | 高级检索  
     检索      

BaTiO3陶瓷的PTC效应
引用本文:莫文玲,张庆军,胡林彦,沈毅.BaTiO3陶瓷的PTC效应[J].河北师范大学学报(自然科学版),2006,30(4):419-422.
作者姓名:莫文玲  张庆军  胡林彦  沈毅
作者单位:河北理工大学,信息学院,河北,唐山,063009;河北理工大学,材料学院,河北,唐山,063009;中国科学院,大连化学物理研究所,辽宁,大连,116023
基金项目:国家自然科学基金 , 河北省自然科学基金
摘    要:对不同掺杂的BaTiO3基陶瓷的电性能、界面形态、氧元素分布特点以及电畴结构等进行研究发现:瓷体半导化速度很快,烧成温度是影响瓷体半导化速度的最重要因素;氧在晶粒晶界的偏析,并且对势垒的形成有重要作用;样品掺杂的元素不同,电畴结构会发生一定变化,畴结构和电阻起跳性存在一定关系.

关 键 词:PTC效应  晶界  BaTiO3陶瓷  电畴
文章编号:1000-5854(2006)04-0419-04
收稿时间:2006-02-27
修稿时间:2006年2月27日

Mechanism of PTC Effect
MO Wen-ling,ZHANG Qing-jun,HU Lin-yan,SHEN Yi.Mechanism of PTC Effect[J].Journal of Hebei Normal University,2006,30(4):419-422.
Authors:MO Wen-ling  ZHANG Qing-jun  HU Lin-yan  SHEN Yi
Institution:1. College o[ Information, Hebei Polytechnic University, Hebei Tangshan 063009, China; 2. College of Materials,Hebei Polytechnic University,Hebei Tangshan 063009,China; 3. Dalian Institute of Chemical Physics,Chinese Academy Sciences,Liaoning Dalian 116023,China
Abstract:The electrical property, interface morphology, the distribution of oxygen and domain of ceramic materials with different donor doped were studied in this paper and the results indicated that ceramic semiconducting were very fast and the most important factor to affect ceramic semiconducting career was sinting temperature;oxygen was segregated in crystal boundary and this was important to form barrier;domain structure varied when different elements were adulterated ; domain and the resistance jumping property were related.
Keywords:PTC effect  crystal interface  BaTiO3 ceramic  domain
本文献已被 CNKI 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号