NaF薄膜的结构与应力分析

采用脉冲激光沉积(PLD)法在Si(100)衬底上生长了NaF薄膜．分别用原子力显微镜(AFM)、X射线衍射(XRD)、X射线光电子能谱(XPS)对薄膜的微观结构、表面形貌以及薄膜应力进行了表征与分析．AFM测试结果表明,低激光能量密度下制备的薄膜表面均匀、致密,均方根粗糙度(Rms)仅为0．538 nm;XRD分析结果表明,用脉冲激光沉积方法制备的氟化钠薄膜在(222)晶面有明显的择优取向．应力分析薄膜的残余应力为压应力,应力大小随激光能量密度的增加而增加;XPS分析结果表明,热蒸发制备的NaF薄膜氧含量明显高于PLD方法制备的NaF薄膜的氧含量．热蒸发方法制备的薄膜中的氧含主要来源于水中的氧,PID方法制备的薄膜中的氧主要来源于游离态氧,说明PLD方法制备的薄膜不容易潮解．

Analysis of Structure and Residual Stress of NaF Films

The production of NaF films on Si(100)by Pulsed Laser Deposition is reported.The structural and morphological characterization of the films has been performed by different complementary techniques as x-ray diffraction(XRD),atomic force microscopy(AFM),and x-ray photoemission spectroscopy(XPS).The AFM pictures show that the films are smooth and compact;The Rms roughness of the films which was fabricated at low energy density is 0.538 nm.The films deposited by Pulsed laser Deposition are polycrystalline and(222) preferred orientation.Analysis of residual stress displays its compression stress.The stress of films increase with the increasing of energy density.X-ray photoemission spectroscopy(XPS)spectrum indicates that oxygen content of films by thermal evaporated and Pulsed Laser Deposition.Oxygen of films by thermal evaporated is mainly due to absorptive water.Oxygen of films by Pulsed laser Deposition is mainly due to free Oxygen which suggests NaF films by Pulsed Laser Deposition is not easy deliquescence.