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| 用慢正电子束测定类金刚石薄膜中的缺陷浓度 | |
| 引用本文： | 徐燕,吴艳,翁惠民,程宇航.用慢正电子束测定类金刚石薄膜中的缺陷浓度[J].江南大学学报(自然科学版),2008,7(5). |
| 作者姓名： | 徐燕 吴艳 翁惠民 程宇航 |
| 作者单位： | 1. 湖州师范学院,理学院,浙江,湖州,313000 2. 中国科学技术大学,理学院,安徽,合肥,230026 3. 华中科技大学,材料科学与工程学院,湖北,武汉,430074 |
| 摘 要： | 对在不同极板负偏压下采用射频-直流等离子体方法制备得到的类金刚石膜(a-C:H)的微结构进行了测量,利用慢正电子束实验装置,探测并分析了样品缺陷浓度的分布情况.结果表明,在不同偏压下制备的薄膜,其膜中缺陷浓度存在很大差别,但在900 V偏压下制得的样品,膜中的缺陷浓度最低. |
| 关 键 词： | 类金刚石膜 缺陷浓度 慢正电子 扩散长度 |
Density of Defect Concentration of Diamond Like Carbon Films by Slow Positron |
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| XU Yan,WU Yan,WENG Hui-min,CHENG Yu-hang.Density of Defect Concentration of Diamond Like Carbon Films by Slow Positron[J].Journal of Southern Yangtze University:Natural Science Edition,2008,7(5). | |
| Authors: | XU Yan WU Yan WENG Hui-min CHENG Yu-hang |
| Abstract: | Diamond like carbon films(DLC films) were deposited on Si substrates from the mixture of C2H2 and Ar by r.f.-d.c.plasma enhanced chemical vapor deposition.The influence of r.f.bias on density of defect was studied by slow positron beam.The results of positron annihilation spectra showed that defect concentration was different in all the DLC films.And the density of defect was lowest in the film which deposited at 900 V bias. |
| Keywords: | DLC defect concentration slow positron diffusion |
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