聚3-己基噻吩聚合物薄膜晶体管稳定性

以单晶硅为衬底, 二氧化硅为栅介质层, 聚3-己基噻吩（P3HT）薄膜为半导体活性层, 金属Au为源、漏电极, 制备出聚合薄膜晶体管（PTFT）, 并对该器件特性进行了表征．研究了该器件在空气环境下的稳定性, 并对该器件在空气中的不稳定性机理进行了讨论．结果表明, 当器件曝露在空气中时, 随着曝露时间的增加, 器件的饱和漏电流明显增大, 阈值电压逐渐增加．空气中的水是影响器件特性变化的主要因素．通过采用光刻胶钝化处理可以有效地改善P3HT-PTFT器件空气中的稳定性, 并使器件的载流子迁移率提高3倍．

Stability of Polymer Thin-Film Transistors Based on Poly(3-Hexylthiophene)

Polymer thin-film transistor (PTFT) based on Poly(3-hexylthiophene) (P3HT) thin films (P3HT-PTFT) have been fabricated on silicon substrate with SiO2 as gate insulator, P3HT polymer as semiconducting active layer, and gold as source and drain electrodes．The electrical characteristics of the devices was characterized, the stability of the devices exposed to ambient air was investigated, and the unstable mechanism of the devices exposed to ambient air was also discussed in detail．The results indicated that when the devices are exposed to ambient air, with increasing exposure time, both the saturation current and the threshold voltage increased obviously．The atmospheric water in the ambient air was the crucial factor that brought about the change in the device characteristics．Passivation treatment by using a photoresist layer can effectively improve the stability of the devices exposed to ambient air and enhance the field-effect mobility up to about 3 times．