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溅射气压对射频磁控溅射制备ZnO薄膜结构的影响
引用本文:赵梦遥,李明标.溅射气压对射频磁控溅射制备ZnO薄膜结构的影响[J].渤海大学学报(自然科学版),2011,32(1):31-33.
作者姓名:赵梦遥  李明标
作者单位:渤海大学,数理学院,辽宁,锦州,121013
基金项目:辽宁省教育厅高等学校科研项目计划
摘    要:采用射频磁控溅射技术在玻璃衬底上制备ZnO薄膜.利用X射线衍射仪、原子力显微镜,分析了ZnO薄膜的晶体结构和表面形貌.结果表明:所制备的 ZnO薄膜是具有(002)晶面择优生长的多晶薄膜.溅射气压为0.3Pa时,薄膜的晶粒尺寸较大,结晶度提高.

关 键 词:射频磁控溅射  ZnO薄膜  溅射气压

Effect of sputtering pressure on structure of ZnO films deposited by RF magnetron sputtering
ZHAO Meng-yao,LI Ming-biao.Effect of sputtering pressure on structure of ZnO films deposited by RF magnetron sputtering[J].Journal of Bohai University:Natural Science Edition,2011,32(1):31-33.
Authors:ZHAO Meng-yao  LI Ming-biao
Affiliation:ZHAO Meng-yao,LI Ming-biao (College of Mathematics and Physics,Bohai University,Jinzhou 121013,China.)
Abstract:ZnO films are deposited on glass substrates by RF magnetron sputtering technology.The crystal structure and surface morphology of ZnO films are analysed by using X - ray diffraction(XRD ) atom force microscope(AFM).The result shows that all the deposited films are polycrystalline,growing preferentially in the(002)crystallographic direction.When the sputtering pressure is 0.3Pa,the grain size of ZnO films is larger, and the crystallinity increases.
Keywords:RF magnetron sputtering  ZnO films  sputtering pressure  
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