| 发可见光的掺氮砷化镓 |
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| 引用本文： | 周继程,沈德新,乔墉,徐晨梅,翁渝民. 发可见光的掺氮砷化镓[J]. 应用科学学报, 1984, 2(3): 277-279 |
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| 作者姓名： | 周继程 沈德新 乔墉 徐晨梅 翁渝民 |
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| 作者单位： | 1. 中国科学院上海冶金研究所;2. 复旦大学 |
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| 摘 要： | 鉴于氮在磷砷化镓中能形成等电子陷阱,人们曾希望向砷化镓掺氮并研究其有关特性,但均未获成功[1~3]。主要困难是,即使用离子注入技术向砷化镓注14N+,但退火后的结果表明,氮的特征峰已不复存在。
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| 收稿时间： | 1982-09-10 |
VISIBLE LIGHT EMISSION FROM NITROGEN IMPLANTED GaAs |
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| ZHOU JICHENG,SHEN DEXIN,QIAO YONG,XU CHENMEI,WENG YUMIN. VISIBLE LIGHT EMISSION FROM NITROGEN IMPLANTED GaAs[J]. Journal of Applied Sciences, 1984, 2(3): 277-279 |
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| Authors: | ZHOU JICHENG SHEN DEXIN QIAO YONG XU CHENMEI WENG YUMIN |
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| Affiliation: | 1. Shanghai Institute of Metallurgy, Academia Sinica;2. Fu Dan University |
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| Abstract: | The visible light emission from nitrogen implanted GaAs by applying reverse bias has been observed for the first time in our laboratory.Samples were prepared with following procedures:zino diffusion, nitrogen implantation (at 450℃), annealed under H2 atmosphere at temperature from 540°G up to 600-650℃ by applying the uncoating technique, and finally meases were performed by conventional techniques. |
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