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量子阱中InAs/In1-xGaxAs自组织量子点的电子结构
引用本文:刘承师,马本堃,王立民. 量子阱中InAs/In1-xGaxAs自组织量子点的电子结构[J]. 北京师范大学学报(自然科学版), 2002, 38(4): 500-505. DOI: 10.3321/j.issn:0476-0301.2002.04.015
作者姓名:刘承师  马本堃  王立民
作者单位:北京师范大学物理学系,100875,北京
基金项目:高等学校博士学科点专项科研项目;96002703;
摘    要:采用有效质量近似和绝热近似,计算了量子阱中InAs/In1-xGaxAs自组织量子点(点在阱中,DWELL)的电子结构和光学性质. 结果表明,电子能级随受限势的增大而升高,并随着量子点的尺寸的增大而降低,而且量子阱的宽度和量子点浸润层的厚度增加也会导致能级有所降低. 说明DWELL结构参数变化会使光致发光峰发生相应的蓝移或红移.

关 键 词:点在阱中  电子结构  光致发光峰波长
修稿时间:2002-03-20

ELECTRONIC ENERGY SPECTRA OF InAs/In1-xGaxAs SELF-ASSEMBLED QUANTUM DOTS-IN-A-WELL STRUCTURE
Liu Chengshi Ma Benkun Wang Limin. ELECTRONIC ENERGY SPECTRA OF InAs/In1-xGaxAs SELF-ASSEMBLED QUANTUM DOTS-IN-A-WELL STRUCTURE[J]. Journal of Beijing Normal University(Natural Science), 2002, 38(4): 500-505. DOI: 10.3321/j.issn:0476-0301.2002.04.015
Authors:Liu Chengshi Ma Benkun Wang Limin
Abstract:The effective mass approximation and adiabatic approximation are applied to calculate the electronic energy spectra of InAs/In 1- x Ga x As self assembled quantum dots in a well(DWELL) structure under various structural parameters. Results show that the energy spectra structure is sensitive to the structural parameter variation of quantum dot (QD) and quantum well (QW). The computation suggests that the QDs with smaller size and higher confining potential have a higher electron and hole energy level which result in the PL peak wavelength a small blue shift, the narrower QW and thinner self assembled QD wetting layer (WL) have similar conclusion. The photoluminescence (PL) spectra are calculated also.
Keywords:dots in a well(DWELL)  electronic stucture  photoluminescence peak wavelength
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