| Epitaxyof SiGe Layers by Ultrahigh Vacuum Chemical Vapor Deposition |
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| 引用本文： | 罗广礼,陈培毅,钱佩信,林惠旺,刘理天. Epitaxyof SiGe Layers by Ultrahigh Vacuum Chemical Vapor Deposition[J]. 清华大学学报, 2000, 5(2): 208-210 |
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| 作者姓名： | 罗广礼 陈培毅 钱佩信 林惠旺 刘理天 |
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| 作者单位： | LUO Guangli，CHEN Peiyi，QIAN Peixin，LIN Huiwang，LIU Litian Institute of Microelectronics，Tsinghua University，Beijing 100084，China |
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| 摘 要： | Introduction Becausethepropertiescanbeadjustedbythestraindistributionandthepossibleintegrationwithstandardsilicontechnology,silicon-germanium(SiGe)heterosystemshavebecomemoreimportantinrecentyears.AnumberofinterestingelectronicandopticaldeviceshavebeendevelopedusingSiGe.Thesedevicesincludeheterostructurefieldeffecttransistors(HFET)[1,2],heterojunctionbipolartransistors[35],andinfrareddetectors[6,7].Futureprospectshaveencouragedthesearchforimproveddepositiontechniquesforsiliconandsilicon…
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Epitaxy of SiGe Layers by Ultrahigh Vacuum Chemical Vapor Deposition |
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| LUO Guangli,CHEN Peiyi,QIAN Peixin,LIN Huiwang,LIU Litian. Epitaxy of SiGe Layers by Ultrahigh Vacuum Chemical Vapor Deposition[J]. Tsinghua Science and Technology, 2000, 5(2): 208-210 |
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| Authors: | LUO Guangli CHEN Peiyi QIAN Peixin LIN Huiwang LIU Litian |
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| Abstract: | Epitaxy of SiGe layers by an ultrahigh vacuum chemical vapor deposition system is investigated. Observations with a Nomarski microscope and measurements using Raman scattering show that the surface morphology and the qualities of the epitaxial layers degrade rapidly as the growth temperatures increase from 550℃ to 650℃, but improve greatly when PH3 is introduced. |
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| Keywords: | SiGe chemical vapor deposition (CVD) Raman scattering |
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