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纳米压印技术中模板表面的气相法抗粘连修饰
引用本文:李海华,李小丽,王庆康. 纳米压印技术中模板表面的气相法抗粘连修饰[J]. 上海交通大学学报, 2007, 41(10): 1687-1689,1694
作者姓名:李海华  李小丽  王庆康
作者单位:上海交通大学,微纳科学技术研究院,薄膜与微细技术教育部重点实验室,微米/纳米加工技术国家重点实验室,上海,200240;上海交通大学,微纳科学技术研究院,薄膜与微细技术教育部重点实验室,微米/纳米加工技术国家重点实验室,上海,200240;上海市纳米科技与产业发展促进中心,上海,200237
基金项目:上海市纳米科技专项基金;微米/纳米加工技术国家重点实验室资助项目
摘    要:研究了采用全氟四氢辛基硅烷(F13-TCS)对纳米压印技术中所用SiO2模板进行表面修饰的情况,分析了用气相法在SiO2模板表面形成F13-TCS单分子膜的形成过程及化学机理,并用X射线光电子能谱仪(XPS)和视频光学接触角测试仪对模板修饰表面的元素成分、价态和表面能进行了测试表征,用原子力显微镜(AFM)对压印过程中的模板结构及模板复制结构进行了对比分析.结果表明,通过F13-TCS对SiO2模板的表面修饰,可以大大降低模板与压印聚合物层之间的相互作用力,在纳米压印过程中实现结构较好的转移、复制.

关 键 词:纳米压印  气相法  表面修饰
文章编号:1006-2467(2007)10-1687-03
修稿时间:2007-09-26

The Preparation of Anti-sticking Layers on Stamps of Nano-imprint Lithography Technology via Vapor Deposition Process
LI Hai-hua,LI Xiao-li,WANG Qing-kang. The Preparation of Anti-sticking Layers on Stamps of Nano-imprint Lithography Technology via Vapor Deposition Process[J]. Journal of Shanghai Jiaotong University, 2007, 41(10): 1687-1689,1694
Authors:LI Hai-hua  LI Xiao-li  WANG Qing-kang
Affiliation:1. Key Lab. for Thin Film and Microfabrication Technology of Ministry of Education, National Key Lab. of Nano/Micro Fabrication Technology,Research Inst. of Micro/ Nanometer Science and Technology, Shanghai Jiaotong Univ. , Shanghai 200240, China; 2. Shanghai Nanotechnology Promotion Center, Shanghai 200237, China
Abstract:F_(13)-TCS film was deposited on the surface of SiO_2 stamp through vapor deposition process.The formation process and chemical mechanism of it was studied.The contents of element and valence band were characterized by XPS,the contact angle and surface energy were measured by optical contact angle measuring device,and the structure of stamp and duplicate structure of stamp were contrasted by AFM.The research results indicate that the interaction force between the stamp and polymer layers decrease greatly through F_(13)-TCS modifying the surface of SiO_2 stamp.It is favorable for shifting and replication of the stamp in nanoimprint lithography.
Keywords:nanoimprint  vapor deposition  modifying of surface
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