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不同n(Zr)/m(Ti)及靶形式在不同衬底上溅射PZT薄膜的研究
引用本文:叶勤 PONGTHEP Arkornsakul 等.不同n(Zr)/m(Ti)及靶形式在不同衬底上溅射PZT薄膜的研究[J].暨南大学学报,2001,22(5):59-63.
作者姓名:叶勤  PONGTHEP  Arkornsakul
作者单位:[1]暨南大学物理系,广东广州510632 [2]清迈大学物理系,泰国清迈502000
基金项目:国务院侨办重点学科科研基金资助项目 ( 93 95 3 5 )
摘    要:分别用m(Zr)/m(Ti)配比为30/70、53/47、70/30的源材料及陶瓷块状靶和预烧粉末靶的形式,在Ag、Au、Pt衬底上溅射制取PZT薄膜,比较分析了薄膜的钙钛矿结构形成情况,所需的热处理温度及铁电特性,研究表明:靶材的配比造近30/70时较容易获得钙钛矿结构;用预烧粉末靶或用Ag衬底可降低热处理温度;用Au、Pt衬底能得到较好的电学特性。

关 键 词:PZT薄膜  衬底  智能材料  热处理  铁电材料  锆/钛比  靶形式  溅射制备
文章编号:1000-9965(2001)05-0059-05
修稿时间:2001年2月27日

Study of sputtering PZT thin films on substrates of Ag, Au and Pt in different source material ratio of m(Zr)/m(Ti) and in ceramic target and calcined powder target
YE Qin ,ZHOU Shen-ping ,PONGTHEP Arkornsakul.Study of sputtering PZT thin films on substrates of Ag, Au and Pt in different source material ratio of m(Zr)/m(Ti) and in ceramic target and calcined powder target[J].Journal of Jinan University(Natural Science & Medicine Edition),2001,22(5):59-63.
Authors:YE Qin  ZHOU Shen-ping  PONGTHEP Arkornsakul
Institution:YE Qin 1,ZHOU Shen-ping 1,PONGTHEP Arkornsakul 2
Abstract:PZT thin films were sputtered on the substrates of Ag, Au and Pt in different source material ratio of m(Zr)/m(Ti) of 30/70,53/47, 70/30 and in ceramic target and calcined powder target. The circumstances of forming perovskite structure, the needed temperatures of heating treatment and the ferroelectrical properties of obtained PZT thin films were compared and analyzed. The result indicates that the ratio of m(Zr)/m(Ti) approaching 30/70 is benefited to obtain the perovskite structure; adapting calcined powder target or adapting Ag substrate can decrease the temperature of heating treatment; adapting Au, Pt substrates can get better electrical property.
Keywords:PZT thin film  Ag  Au  Pt  substrates  intellect material  heating treatment
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