射频等离子体功率参数对硅基发光薄膜生长与结构的影响

采用射频等离子体化学气相沉积(RF-PECVD)技术,以SiH4和Ar的混合气体为源气体,在石英玻璃衬底上制备了硅基发光薄膜.利用场发射扫描电子显微镜(FESEM)、X射线衍射(XRD)、透射电子显微镜(TEM)和傅里叶红外光谱(FTIR)对薄膜的形貌、结构和性能进行了表征,并利用发射光谱(OES)对薄膜等离子体生长过程进行了分析.研究结果表明,随着射频功率的增加,等离子体发射光谱中Hβ谱线强度激增,薄膜的红外光谱中Si—O键在1095cm-1处振动吸收峰强度减小,Si—Si键在613cm-1处特征吸收峰强度增加,说明射频功率增加加剧了硅烷的裂解与氧化硅的还原,提高了薄膜结晶度和纳米晶粒的融合度,并降低了沉积薄膜的表面粗糙度.

Effect of Radio Frequency Plasma Power on Growth and Structure of Silicon-Based Luminescent Thin Films

Silicon-based luminescent thin films were deposited on quartz glass substrate by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique with the mixture of SiH4 and Ar as reaction gases.Field emission scanning electron microscope (FESEM),X-ray diffraction (XRD),transmission electron microscope (TEM) and Fourier infrared spectra (FTIR) were used to investigate the surface morphology,structure and property of the films.And the reactive plasma species were analyzed by optical emission spectrum (OES).It was shown that the intensity of Hβ in plasma increased,the infrared absorption intensity of Si—O bond at 1 095 cm-1 decreased and Si—Si bond at 613 cm-1 increased with the increasing of the radio frequency power of the plasma.So it was reasonably believed that the raised radio frequency power would promote the dissociation of silane and reduction of the deposited silicon oxide,which would result in increasing of the film crystallinity,nanocrystal fusion and decreasing of film surface roughness.