| 理想的非晶态硅和锗的结构模型 |
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| 引用本文： | 王德和.理想的非晶态硅和锗的结构模型[J].北京大学学报(自然科学版),1990,26(1):86-90. |
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| 作者姓名： | 王德和 |
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| 作者单位： | 北京大学计算机科学与技术系 |
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| 摘 要： | 非晶态结构与相应的晶态结构之间存在着一定的联系。据此,本文提出了一个关于理想的非晶态半导体中原子排布的物理模型。利用它成功地将金刚石晶格“改造”成了非晶态硅和锗的连续无规网格,所得结构模型的主要参数(密度、径向分布函数等)均与实验结果符合得较好。
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| 关 键 词： | 半导体 非晶态 硅 锗 结构模型 |
Structural Models for Ideal Amorphous Silicon and Germanium |
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| WANG Dehe.Structural Models for Ideal Amorphous Silicon and Germanium[J].Acta Scientiarum Naturalium Universitatis Pekinensis,1990,26(1):86-90. |
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| Authors: | WANG Dehe |
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| Institution: | Department of Computer Science and Technology |
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| Abstract: | This paper presents a theoretical model for the atomic arrangement in ideal amorphous semiconductors, based on the relationship between amorphous structure and crystalline structure. The theoretical model has been used to simulate the atomic arrangement in a-Si and a-Ge. The characteristics of the structural models obtained are in good agreement with experimental results. |
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| Keywords: | Amorphous semiconductors Atomic arrangement Structural model |
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