| VDMOS结构击穿电压的设计与分析 |
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| 引用本文： | 胡延年. VDMOS结构击穿电压的设计与分析[J]. 辽宁大学学报(自然科学版), 1998, 25(2): 161-165 |
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| 作者姓名： | 胡延年 |
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| 作者单位： | 辽宁大学电子科学与工程系 |
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| 摘 要： | 本文引用了附加有浮动电位保护环和场板的ＶＤＭＯＳ结构击穿电压的解析表达式，描述了浮动电位保护环和场板效应的对穿通击穿电压的改进，经比较，理论结果与测量数据有较好的一致性。
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| 关 键 词： | 保护环 设计 VDMOS结构 击穿电压 |
The Design and Analysis of Breakdown Voltage in VD MOS Structure |
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| Hu Yannian. The Design and Analysis of Breakdown Voltage in VD MOS Structure[J]. Journal of Liaoning University(Natural Sciences Edition), 1998, 25(2): 161-165 |
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| Authors: | Hu Yannian |
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| Affiliation: | Hu Yannian Department of Electronic Science and Engineering,Liaoning University,Shenyang 110036 |
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| Abstract: | This paper quoted the analytical expression of float electric potential protective loop and field board VD MOS structure breakdown voltage. Described the condition of pass throughing breakdown voltage was affected by float electric potential protective loop and field board effects. Theoretical results are in well agreement with measured data. |
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| Keywords: | Protective loop Field board Passing through type Width of depletion layer. |
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