IC设计中晶体管直流模型参数的提取

提出一种ＩＣ芯片设计中双极型器件直流模型参数的提取方法。采取ＧＰ模型建立双向目标函数进行全局优化提取，分１级和２级参数两层处理．１级参数系提取ＩＣ设计中各管的共同参数，２级参烽则为提取与各个管的结构和尺寸相关的特定参数，尽管提取对象只是样管，但可以由模型内在关系通过程序计算出各管的特定参数，从而保证了电路模拟所需输入参数的真实性。

An Extraction of DC Modelling Parameters for Integrated Transistor

This paper has proposed an extraction method of DC modelling parameters and a calculation model of parameters which depend upon the structure and geometry size of designing integrated transistors. The extraction on parameters which were divided into two parts (general characters and individual ones) used GP model and global optimization algorithms with a double directive target function. After the parameters of sample device have been extracted, the individual parameter can be found based on inherent relation treatment for the parameters from the value of the sample device.