| 高离化态Si的束箔光谱的理论分析 |
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| 引用本文： | 符彦飙,董晨钟,袁萍,陈冠英,张树东,王友德,杨治虎.高离化态Si的束箔光谱的理论分析[J].西北师范大学学报,1999,35(3):1. |
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| 作者姓名： | 符彦飙 董晨钟 袁萍 陈冠英 张树东 王友德 杨治虎 |
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| 作者单位： | 西北师范大学物理系，中国科学院近代物理研究所 |
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| 摘 要： | 用ＨＸＢ方法计算了Ｓｉ离子高离化态束箔光谱的跃迁波长、振子强度、跃迁几率以及能级寿命等．对不同束流能量入射下的Ｓｉ离子谱进行了具体分析．并将部分计算结果与有关文献中的实验值做了比较
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| 关 键 词： | 波长 振子强度 能级寿命 束箔光谱 |
| 文章编号： | 1001-988X(1999)03-0051-05 |
| 修稿时间： | 1999-01-05 |
Theoretical analysis of beam-foil spectrum for highly ionized Si |
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| FU Yan-biao,DONG Chen-zhong,YUAN Ping,CHEN Guan-ying,ZHANG Shu-dong,WANG You-de,YANG Zhi-hu.Theoretical analysis of beam-foil spectrum for highly ionized Si[J].Journal of Northwest Normal University Natural Science (Bimonthly),1999,35(3):1. |
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| Authors: | FU Yan-biao DONG Chen-zhong YUAN Ping CHEN Guan-ying ZHANG Shu-dong WANG You-de YANG Zhi-hu |
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| Institution: | FU Yan-biao |
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| Abstract: | Wavelength,oscillator strengths,transition probabilities and level lifetimes are calculated for foil excited highly ionized Si with multiconfiguration HXR method.The spectrum of Si ions in several beam energies are analysed.Comparisons with existing experimental results are given. |
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| Keywords: | wavelength oscillator strengths level lifetimes beam foil spectrum |
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