| 利用金属／绝缘本／半导体（MIS）结构研究IPN的介电常数 |
| |
| 引用本文： | 刘萍,刘菊英,张大博. 利用金属／绝缘本／半导体（MIS）结构研究IPN的介电常数[J]. 应用科技, 2001, 28(5): 33-35 |
| |
| 作者姓名： | 刘萍 刘菊英 张大博 |
| |
| 作者单位： | 哈尔滨标准情报研究所，黑龙江哈尔滨 150006 |
| |
| 摘 要： | 采用自制的制膜工具有n-型硅片上制备了互穿聚合物网络（IPN）绝缘层膜。用真空镀在IPN膜上蒸镀铝圆项电极形成了Al/IPN/n-Si(MIS)结构。在室温条件下测定了电容－电压（C－V）特性。根据测定的C－V特性曲线计算了IPN膜的介电常数。
|
| 关 键 词： | MIS结构 IPN 电容－电压特性 介电常数 互穿聚合物网络 绝缘层膜 硅片 |
| 文章编号： | 1009-671X(2001)05-0033-03 |
| 修稿时间： | 2001-03-22 |
Study of DielectricCharacteristics of Interpenetrating Polymer Networks (IPN) by Using MIS Structure |
| |
| LIU Ping,LIU Ju-ying,ZHANG Da-bo. Study of DielectricCharacteristics of Interpenetrating Polymer Networks (IPN) by Using MIS Structure[J]. Applied Science and Technology, 2001, 28(5): 33-35 |
| |
| Authors: | LIU Ping LIU Ju-ying ZHANG Da-bo |
| |
| Abstract: | Polyurethane/Polybutyl-methacrylate (PU/PBMA) Inter-penetrating Polymer Networks (IPN) film was formed on n-Si substrate by dropping technique.When aluminium was vacuum-deposited on the top of the film the Al/IPN /n-Si(MIS) structure was fabricated.The dielectric constant of IPN was obtained by using high frequency Capacitance-Voltage (C—V) characteristics. |
| |
| Keywords: | MIS structure IPN Capacitance_Voltage characteristics dielectric properties |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
