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低维半导体GaAs圆形和矩型量子线的能带结构
引用本文:王松柏.低维半导体GaAs圆形和矩型量子线的能带结构[J].江西科学,2009,27(4):487-489,527.
作者姓名:王松柏
作者单位:福州大学物理与信息工程学院,福建福州,350002
基金项目:福建省教育厅科研资助项目 
摘    要:利用量子力学方法对低维半导体GaAs无限深势阱圆型量子线和有限深势阱矩型量子线的能带结构进行了详细的分析研究,分别得出系统各自的能量表式和波函数表式,并对其束缚态能量存在的必然性和物理意义进行了进一步的分析探讨。

关 键 词:低维半导体GaAs  圆型量子线  矩型量子线  能带

The Energy Band Structure of Round and Rectangle Sectional Quantum Wires in Low Dimensional Semiconductor GaAs
WANG Song-bai.The Energy Band Structure of Round and Rectangle Sectional Quantum Wires in Low Dimensional Semiconductor GaAs[J].Jiangxi Science,2009,27(4):487-489,527.
Authors:WANG Song-bai
Institution:WANG Song-bai (College of Physics and Informational Engineering, Fuzhou University, Fujian Fuzhou 350002 PRC)
Abstract:The energy-band structure of both round sectional quantum wire at unlimited-depth quantum well and rectangle sectional quantum wire at limited-depth quantum well in low dimensional semiconductor GaAs is studied by quantum mechanics. First, both the energy-band formulas and wave function are found;second, the essential terms of quantum bound state energy and physical meaning are discussed.
Keywords:Low dimensional semiconductor GaAs  Round sectional quantum wire  Rectangle sectional quantum wire  Energy-band
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