| 大功率晶体管横向结构参数设计与分析 |
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| 引用本文： | 杨方.大功率晶体管横向结构参数设计与分析[J].科学技术与工程,2012,12(20):5027-5030. |
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| 作者姓名： | 杨方 |
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| 作者单位： | 遵义师范学院物理与机电工程系,遵义,563002 |
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| 摘 要： | 为研究大功率晶体管的结构和工作原理,提出设计参数指标为集电极最大允许耗散功率P=50 W。采用梳状结构,利用近似方法结合各项工艺条件经过综合分析,计算出大功率晶体管的发射结和集电结面积、发射极总周长、发射极与基极间距、发射极金属电极条长和宽、晶片面积等横向结构参数,为大功率晶体管的结构设计和应用提供了数据支撑。计算方法通过实验验证,适用于更大功率晶体管的参数分析和计算。
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| 关 键 词： | 大功率晶体管 横向结构参数 半导体技术 设计 分析 |
| 收稿时间： | 4/1/2012 6:51:13 PM |
| 修稿时间： | 4/22/2012 2:11:54 AM |
Designing and Analyzing the Horizontal Structure Parameters of High-power Transistor |
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| yangfang.Designing and Analyzing the Horizontal Structure Parameters of High-power Transistor[J].Science Technology and Engineering,2012,12(20):5027-5030. |
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| Authors: | yangfang |
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| Institution: | YANG Fang(Department of Physics,Zunyi Normal College,Zunyi 563002,P.R.China) |
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| Abstract: | Structure and working principle of the study of high-power transistors,design parameters of collector maximum allowable power dissipation P=50 W are proposed.Comb structure,approximation method are combined to the various process conditions after a comprehensive analysis,The power transistor emitter junction and collector junction area are calculated.Launching extremely total circumference of the emitter-base spacing,extremely metal electrode bar length and width,chip area,and other horizontal structural parameters are launched.Data support for the structural design and application of high-power transistors is provided.The calculation method by experiment are verified,the parameter analysis and calculation of the higher power transistor are verified. |
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| Keywords: | High—power transistor horizontal structure parameters semiconductor technology design analysis |
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