基于 CFX软件的氮化硅反应炉内热过程的数值模拟

利用大型商业软件CFX建立了高温氮化硅反应炉内温度场的数学模型,采用拟流体模型数值模拟炉内的层流流动,分析了氮气体积流量、各向异性散射和辐射特性等因素对温度场和产物质量浓度的影响.计算结果表明,为确保反应充分完全,预热段温度控制显得非常重要,而氮气体积流量起着决定性的作用;各向异性散射对径向温度、产物质量浓度有一定的影响;散射率对温度场影响很小;计算值与实验值相比较,误差在10%之内.

Numerical simulation on thermal process in an Si3N4-reaction furnace with CFX

A numerical simulation on the thermal process for an Si3N4-reaction furnace based on the software CFX was investigated. A similar flow model was used to numerically simulate the laminar flow in the furnace. The influence of some different factors such as volume quantity of N2, anisotropic scattering and radiation properties on the temperature field and mass density of products was studied. The results showed that the temperature control on the preheating zone was important for full reaction. However, the volume quantity of N2, i.e., inlet velocity, plays a crucial role. Anisotropic scattering influenced on the radial temperature and mass density of products. Absorption coefficient and scattering coefficient influenced little on the temperature field. The error between simulated and experimental values was less than 10%.