| 硅片氧化过程及其对硅中杂质分布影响的分析 |
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| 引用本文： | 黄祖洽,黄雪梅.硅片氧化过程及其对硅中杂质分布影响的分析[J].北京师范大学学报(自然科学版),1988(3). |
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| 作者姓名： | 黄祖洽 黄雪梅 |
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| 作者单位： | 北京师范大学低能核物理研究所，北京师范大学低能核物理研究所 |
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| 摘 要： | 利用带活动边界的“D＇Alembert变分法”分析了硅片的氧化过程及此过程所引起的硅中杂质的再分布.氧化过程的理论分析结果及对两种常见的杂质初始分布的计算结果均与实验相符.
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| 关 键 词： | 硅片氧化 活动边界 扩散 分凝 杂质再分布 D′Alenbert变分原理 |
ANALYSIS OF THE SILICON OXIDATION PROCESS AND ITS INFLUENCE ON THE DOPANT DISTRIBUTION IN SILICON PLATE |
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| Huang Zuqia Huang Xuemei.ANALYSIS OF THE SILICON OXIDATION PROCESS AND ITS INFLUENCE ON THE DOPANT DISTRIBUTION IN SILICON PLATE[J].Journal of Beijing Normal University(Natural Science),1988(3). |
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| Authors: | Huang Zuqia Huang Xuemei |
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| Institution: | Institute of Low Energy Nuclear Physics |
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| Abstract: | The silicon oxidation process and the redistribution of dopants in silicon plate induced thereby are analysed by D'Alembert variational method for moving boundary. The theoretical analysis of the oxidation process and the computation for two usual cases of initial dopant distribution agrees with ex- perimental results. |
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| Keywords: | silicon oxidation moving boundary diffusion segregation dopant redistribution D'Alembert variational principle |
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