| 在四量子阱结构中浅施主的束缚能 |
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| 引用本文： | 邢金海. 在四量子阱结构中浅施主的束缚能[J]. 辽宁大学学报(自然科学版), 1991, 0(4) |
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| 作者姓名： | 邢金海 |
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| 作者单位： | 辽宁大学物理系 |
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| 摘 要： | 本文提出氢杂质在中间Ga_(1-x)Al_xAs垒中的四量子阱模型,计算了束缚能与阱和垒的宽度、势垒的高度和杂质在垒中的位置的依赖关系。结果表明,与双量子阱模型比较,规律性是相符合的,在单阱极限的计算结果与前人的一致。
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| 关 键 词： | 量子阱 施主(杂质) 束缚能 合金组分(Al 浓度) 超晶格 |
Binding Energy of Shallow Donor in Four Quantum Well Structures |
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| Xing Jinhai. Binding Energy of Shallow Donor in Four Quantum Well Structures[J]. Journal of Liaoning University(Natural Sciences Edition), 1991, 0(4) |
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| Authors: | Xing Jinhai |
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| Affiliation: | Xing Jinhai Department of Physics,Liaoning University |
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| Abstract: | In this paper we proposed a model of four quantum well with the hydrogenic impurity inside the middle Ga_(1-x) AI_x As barrier region. The dependence of the binding energy on the well and the barrier, thickness, on the height of the potential barrier, and on the impurity position of the barrier is calculated. The results show its regularity were in agreement with the model of a dou double well. The results of the present calculation of single well limit agree with previous results. |
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| Keywords: | quantum well donor(impurity) binding energy alloy composition (AI concentration) superlattice |
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