非晶快离子导体AgI-Ag_4P_2O_7中银沉积的电子探针研究

用电子探针显微分析法,研究了AgI-Ag_4P_2O_7非晶态快离子导体中的银沉积问题。给出了在电子束轰击下银计数率随时间变化曲线。开始时银沉积率随时间而增加较快,然后变得缓慢,最后趋于一个极限值。对于晶化后的样品,由于晶界的阻碍作用,向轰击区迁移的Ag~ 离子减少,离子源枯竭快,银计数率达到极限值比未晶化前快。文中同时给出了电子束轰击区的二次电子像、背射电子像。AgLαX-射线扫描像。在银沉积过程中,发现在电子束轰击区周围伴生有枝叶状的脉纹似的析出物,是由于电子束轰击样品产生温升而导致玻璃中银和银的化合物析晶所致。

EPMA Study on Silver Deposition in Amorphous Fast Ionic Conductor AgI-Ag_4p_2O_7

The silver deposition in amorphous fast ionic conductor AgI-Ag_4P_2O_7 has been investigated by EPMA and the counting rate curves were given. Measurement Performed on sample showed that in the beginning, the silver content at the Points bombarded by the electron beam is increased rather rapidly. After a time, it is increased slowly, and finally attained its saturation limit. However, for the crystallized sample of AgI-Ag_4P_2O_7, the silver tons may be Provided insufficiently at the electron bombarded point for a prolonged deposition due to the hindrance of the grain boundaries in the ions transport pr ocess, the deposition attained its saturation limit rapidly. The secondary electron image and component image at the deposition point as well as AgLa X-ray scanning image at the surface of the sample after silver deposition were given. During the sliver deposition, the veined leaf-like patterns on the sample were found. They may be considered as a resuit of the crystallization of Ag and its compounds due to temperature rise of the sample caused by the electron beam during the bombardment.