用微波方法测量半导体非平衡载流子寿命

介绍用有哑铃状孔－缝端盖的微波谐振腔测量片状半导体材料非平衡载流子寿命的一种方法．腔体用圆柱ＴＥ０１１模高Ｑ腔，易于更换端盖，可以达到较高的测量精度．实验表明，对同一半导体材料测量得到的有效寿命不因端盖孔－缝的改变而变化，所以可以通过选用孔－缝尺寸不同的端盖，来测量不同电导率的材料，以提高信号幅度，从而提高精度．测量是无接触的，因此无需对样品进行加工．用小的孔－缝端盖还可以用来对半导体材料有效寿命的二维分布进行研究．

Application of Microwave Method to Measurement of Nonequilibrium Carrier Lifetime

A method for measurement of nonequilibrium charge carrier lifetime by the TE 011 mode cylindrical cavity with dumbbell shape slots is presented. The measurement is non contact and the sample processing is not required. Moreover, the quality factor Q of cylindrical cavity is high, and high measurement sensitivity can be achieved.For the same sample, the carrier lifetime is not changed with the variation of the coverplate of the cavity with different size of the slots. In order to get high measurement sensitivity, the appropriate size of the slots should be chosen to measure the samples of different conductivity. Meanwhile, the planar distribution of carrier lifetime in semiconductor can be analyzed by such method.