离子注入对多晶金刚石薄膜场发射特性影响的研究

对等离子增强化学气相淀积多晶金刚石薄膜在Ｎ离子注入前后的场发射特性进行研究。研究发现，同一工艺条件下的淀积的多晶金刚石薄膜样口的发展射特性在离子注入前有较大的差异，离子注入后金刚石石薄膜场发射特性的差异基本上得到消除，而且在高场下发射电流密有一定程度的提高，场发射特性得到较大改善。

Emission Characteristics of Polycrystalline Diamond Film by N Ion Implantation

The field emission characteristics of polycrystalline diamond film can be improved using N ion implantation. The emission characteristics after ion implantation were compared with those before implantation. It is found that obvious differences were found on threshold field and emission current density even for samples fabricated under the same process. These differences were eliminated by N ion implantation. Emission current density increases under high field. The mechanism of the improvement was analyzed theoretically. Ion implantation and annealing affect the distribution of defect energy levels. This is due to the absorption of defects by the substrate/diamond interface.