| 氢氧注入在GaAs器件中的应用 |
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| 引用本文： | 韩卫,罗晏.氢氧注入在GaAs器件中的应用[J].北京师范大学学报(自然科学版),1995,31(4):456-460. |
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| 作者姓名： | 韩卫 罗晏 |
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| 作者单位： | 北京师范大学低能核物理研究所 |
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| 摘 要： | 从３个器件说明氢，氧注入在不同方面的应用：（１）用氧注入制备高质量Ｎ－ＳＩ－Ｎ埋层，应用于源栅面对ＭＥＳＦＥＴ中，克服源、栅、漏引线在同一平面交错带来的工艺及寄生效应；（２）用氢注入了Ｐ＾＋－Ｎ＾－－Ｎ＾＋层的Ｎ＾－层，减小ＨＢＴ的ＢＣ结电容，以提高其高频特性；（３）用氢、氧注入制作平面结构的ＨＰＴ，以减小复合电流，提高光电增益，其中尤其强调了选择离子注入的能量、注量及退火温度。
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| 关 键 词： | 氢 氧 离子注入 砷化镓器件 |
APPLICATIONS OF HYDROGEN AND OXYGEN IMPLANTATION TO THE GaAs DEVICES |
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| Han Wei,Luo Yan,Zhu Hongqing,Si Lirong,Li Guohui.APPLICATIONS OF HYDROGEN AND OXYGEN IMPLANTATION TO THE GaAs DEVICES[J].Journal of Beijing Normal University(Natural Science),1995,31(4):456-460. |
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| Authors: | Han Wei Luo Yan Zhu Hongqing Si Lirong Li Guohui |
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| Abstract: | The hydrogen and oxygen implantation can be used for improving device characteristics.A vatriety of applications such as the real N-SI-N+ buried layer formed by oxy gen implantation,the base-collector capacitance reduced by hydrogen implantation and the sur face combination current decreased by hydrogen and oxygen implantation are mainly discussed.The implanted energy,the implanted doses and the optimum annealing conditions are also discussed. |
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| Keywords: | hydrogen oxygen ion implantation GaAs device |
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