| 双束注入的晶格应变 |
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| 引用本文： | 马德录,韩宇.双束注入的晶格应变[J].辽宁大学学报(自然科学版),1999,26(4):328-333. |
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| 作者姓名： | 马德录 韩宇 |
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| 作者单位： | 辽宁大学物理系!沈阳110036 |
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| 基金项目： | 辽宁省教委资助，辽宁省科委资助，沈阳市科委资助 |
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| 摘 要： | 用双晶ｘ射线衍射仪测出了注入能量为１８０ｋｅＶ，不同注入剂量和不同退火温度的Ｎ＾＋＋Ａｓ＾＋双束离子注入的摇摆曲线。利用离子注入的多层模型，试探应变函数和ｘ射线衍射的运动学理论，借助于计算机，用Ｌｅｖｅｎｂｅｒｇ－Ｍａｒｕａｒｄｔ最优化法拟合实验曲线，给出了不同剂 退火温度晶格应变随注入深度的变化。
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| 关 键 词： | 离子注入 退火 x射线衍射 晶格应变 半导体 |
The Lattice Strain of Double Beam Implantation |
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| MA Delu,HAN Yu.The Lattice Strain of Double Beam Implantation[J].Journal of Liaoning University(Natural Sciences Edition),1999,26(4):328-333. |
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| Authors: | MA Delu HAN Yu |
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| Institution: | MA Delu HAN Yu Department of Physics,Liaoning University,Shenyang 110036 |
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| Abstract: | The rocking curves of N ++As + double beam implanted Si with implanted energy at 180KeV, different implanted doses and different annealing temperature were measured by means of double crystal X-ray diffractomer in this paper. On basis of multilayer model and trial and error strain function, the rocking curves were simulated with kinematical theory of X-ray diffraction and Levenberg-Marquards optimization method by means of computer, the lattice strain distribution as a function of depth at different implanted doses and different annealing temperature were given. |
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| Keywords: | ion implantation annealing double crystal X-ray diffraction Lattice strain |
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