| Si3N4和Si3N4／Sio2驻极体薄膜的化学表面修正 |
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| 引用本文： | 张晓青,夏钟福,潘永刚.Si3N4和Si3N4／Sio2驻极体薄膜的化学表面修正[J].同济大学学报(自然科学版),2000,28(5):564-567. |
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| 作者姓名： | 张晓青 夏钟福 潘永刚 |
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| 作者单位： | 同济大学 波耳固体物理研究所，上海 200092 |
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| 基金项目： | 国家自然科学基金资助项目(59682003) |
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| 摘 要： | 采用补偿法对六甲基二硅胺烷（ｈｅｘａｍｅｔｈｙｅｄｉｓｉｌａｎｅ，ＨＭＤＳ）和二氯二甲基硅烷（ｄｉｃｈｌｏｒｏｄｉｍｅｔｈ ｓｉｌｉａｎｅ，ＤＣＤＭＳ）有面修正恒压电晕充电硅基氮化硅（Ｓｉ３Ｎ４）薄膜驻极体及氮化硅／二氧化硅（Ｓｉ３Ｎ４／ＳｉＯ２）薄膜驻极体的电荷储存稳定性进行了比较性的研究。实验结果表明，经过化学表面修正后，驻极体薄膜在高湿环境中的电荷储存稳定性显著提高；在低于２００℃时，ＨＭＤ
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| 关 键 词： | 化学表面修正 驻极体薄膜 电荷储存稳定性 |
| 文章编号： | 0253-374X(2000)05-0564-04 |
| 修稿时间： | 1999年10月25 |
Charge Storage Stability of Chemical Surface Modification Si3N4 and Si3N4/SiO2 Electret Film Based on Silicon Substrate |
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| ZHANG Xiao-qing,XIA Zhong-fu,PAN Yong-gang.Charge Storage Stability of Chemical Surface Modification Si3N4 and Si3N4/SiO2 Electret Film Based on Silicon Substrate[J].Journal of Tongji University(Natural Science),2000,28(5):564-567. |
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| Authors: | ZHANG Xiao-qing XIA Zhong-fu PAN Yong-gang |
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| Abstract: | For HMDS (hexamethyedisilane) and DCDMS (dichlorodimeth siliane) chemical surface modification, the stability of silicon nitride (Si3N4) single layer and silicon nitride/silicon dioxide(Si3N4/SiO2) double layer electrets charged with constant voltage corona were compared by compensation method. The results show that the charge storage stability of film electret increases remarkably in high humidity surroundings after chemical surface modification. In the range of ＜ 200 ℃, HMDS and DCDMS modification have the same effect. However, the thermal stability of surface modified by DCDMS is higher than that of HMDS modification. |
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| Keywords: | Si3N4 Si3N4/SiO2 chemical surface modification Si3N4 Si3N4/SiO2 electret film charge storage stability |
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