| Silicon-Based Grid Structure Photodiode with Selective UV Enhancement |
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| 引用本文： | WANGYing CHENBing-ruo LIUYu-ping. Silicon-Based Grid Structure Photodiode with Selective UV Enhancement[J]. 武汉大学学报:自然科学英文版, 2005, 10(3): 529-533. DOI: 10.1007/BF02831139 |
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| 作者姓名： | WANGYing CHENBing-ruo LIUYu-ping |
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| 作者单位： | [1]SchoolofPhysicsandTechnology,WuhanUniversity,Wuhan430072,Hubei,China [2]SchoolofPhysicsandTechnology,WuhanUniversity,Wuhan430072,Hubei,China／／StateKeyLaboratoryofTransducerTechnology,ChineseAcademyofSciences,Shanghai200050,China |
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| 基金项目： | SupportedbytheFoundationofStatekeyLabora toryofTransducerTechnologyofShanghai(SKt0401) |
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| 摘 要： | Aiming at boosting the low ultraviolet (UV)responsivity induced by the negative impact of the surface dead layer‘ in silicon-based conventional photodiode (CPD), Si photodiodes with live different structures, including both the novel grid structure photodiode(GSPD) and CPD, have been manufactured using thermal diffusion process and tested. The results show that the UV responsivity around 365 nm of GSPD could be as high as 6 times that of CPD, while the high visible (VIS) responsivity is sharply suppressed by the employment of grid shaped junction (GSJ) in the GSPD, which has realized the expectation of selective UV enhancement with prospect for application.
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| 关 键 词： | 硅基发光二级管 响应度 紫外线 格子结构 |
| 收稿时间： | 2004-10-28 |
Silicon-based grid structure photodiode with selective UV enhancement |
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| Wang Ying,Chen Bing-ruo,Liu Yu-ping. Silicon-based grid structure photodiode with selective UV enhancement[J]. Wuhan University Journal of Natural Sciences, 2005, 10(3): 529-533. DOI: 10.1007/BF02831139 |
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| Authors: | Wang Ying Chen Bing-ruo Liu Yu-ping |
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| Affiliation: | (1) School of Physics and Technology, Wuhan University, 430072 Wuhan, Hubei, China;(2) State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, 200050 Shanghai, China |
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| Abstract: | Aiming at boosting the low ultraviolet (UV) responsivity induced by the negative impact of the surface ‘dead layer’ in silicon-based conventional photodiode (CPD), Si photodiodes with five different structures, including both the novel grid structure photodiode (GSPD) and CPD, have been manufactured using thermal diffusion process and tested. The results show that the UV responsivity around 365 nm of GSPD could be as high as 6 times that of CPD, while the high visible (VIS) responsivity is sharply suppressed by the employment of grid shaped junction (GSJ) in the GSPD, which has realized the expectation of selective UV enhancement with prospect for application. Foundation item: Supported by the Foundation of State key Laboratory of Transducer Technology of Shanghai (SKt 0401) Biography: WANG Ying (1981-), male, Master candidate, research direction: semiconductor devices, OLED and related circuits. |
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| Keywords: | responsivity selective ultraviolet enhancement grid-shaped junction silicon ultraviolet photodiode |
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