| HB掺In-GaAs晶体缺陷的X射线形貌研究 |
| |
| 引用本文： | 郭起志,赵梦春,赵惠芳,李庆辉,赵志杰. HB掺In-GaAs晶体缺陷的X射线形貌研究[J]. 东北大学学报(自然科学版), 1990, 0(2) |
| |
| 作者姓名： | 郭起志 赵梦春 赵惠芳 李庆辉 赵志杰 |
| |
| 作者单位： | 东北工学院(郭起志，赵梦春，赵惠芳)，营口火柴厂(李庆辉)，营口火柴厂(赵志杰) |
| |
| 摘 要： | 利用X射线形貌术,结合电子探针研究HB掺In-GaAs晶体缺陷的问题。实验结果表明,等电子掺杂In非常明显地降低了HB法GaAs晶体的缺陷,但其掺入量及其均匀分布十分关键。
|
| 关 键 词： | X射线形貌术 晶体缺陷 位错 等电子掺杂 |
X-Ray Topography on Crystal Defects in HB In-Doped GaAs |
| |
| Quo Qizhi,Zhao Mengchun,Zhao Huifang,Li Qinghui,Zhao Zhijie. X-Ray Topography on Crystal Defects in HB In-Doped GaAs[J]. Journal of Northeastern University(Natural Science), 1990, 0(2) |
| |
| Authors: | Quo Qizhi Zhao Mengchun Zhao Huifang Li Qinghui Zhao Zhijie |
| |
| Abstract: | The crystal defects in HB In-doped GaAs were investigated by means of X-ray topography, with electron microprobe. The experimental results show that the isoelectronic In-doping results in obvious reduction of the crystal defects in HB-GaAs. However, the doping amount and its uniform distribution are crucial. |
| |
| Keywords: | X-ray topography crystal defect dislocation isoelectronic doping. |
| 本文献已被 CNKI 等数据库收录！ |
|
