汽相Cd压控制下熔体生长CdTe晶体的研究

根据测定的CdTe熔体平衡蒸汽分压与温度关系,通过汽相Cd压控制熔体组成生长CdTe晶体,有效地控制了晶体组成对化学计量比的偏离,且晶体完整性、电学与光学特性有了明显改善.测定的若干性能达到或超过国际上报道的最佳值.国内有关单位用以制作的温度传感器和液结光化学电池以及用作CdTe热壁外延衬底,均取得满意结果.

THE GROWTH OF CADMIUN TELLURIDE SINGLECRYSTAL FROM THE MELT UNDER A VAPOR PHASE WITH CONTROLLED Cd PARTIAL PRESSURE

On the basis of the equilibrium Cd partial pressure over the cadmium telluride melt determined by means of optical absorbance measurement, cadmium telluride single crystals were grown from the melt under a vapor phase with controlled Cd partial pressure. The deviation of the crystal composition from the stoichiometric was effectively controlled; The crystal perfection, electrical properties and optical properties were improved obviously. The values of some properties were of the same order of magnitude or better than the best data reported in the literature.The tentative use of our cadmium telluride single crystals to fabricate the temperature sensor and Liquid junction optochemical cell, and to act as the substrate for the hot wall epitaxial growth of cadmium telluride film yielded very satisfactory results.