| P-GeSi/P-Si探测器的研制 |
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| 引用本文： | 刘淑平,贾跃虎.P-GeSi/P-Si探测器的研制[J].太原科技大学学报,1999(1). |
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| 作者姓名： | 刘淑平 贾跃虎 |
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| 作者单位： | 太原重型机械学院 |
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| 摘 要： | 采用ＭＢＥ法在Ｓｉ衬底上生长ＧｅＳｉ异质结，制成ＧｅＳｉ／Ｓｉ异质结探测器。测得其反向击穿电压为１５Ｖ左右，光响应为０．５ｍＡ
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| 关 键 词： | GeSi 探测器 |
The Manufacture of P GeSi/P Si Photodetector |
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| Liu ShupingJia Yuehu.The Manufacture of P GeSi/P Si Photodetector[J].Journal of Taiyuan University of Science and Technology,1999(1). |
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| Authors: | Liu ShupingJia Yuehu |
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| Abstract: | The GeSi layer is grown by using MBE on si wafers,and the photodetectior of GeSi Heterojunction has been manufactured,it's reverse penetrating voltage is about 15v. The light response is 0.5mA. |
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| Keywords: | GeSi photodetector |
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