| 掺氧多晶硅薄膜退火特性的研究 |
| |
| 引用本文： | 王云珍,钮建昌. 掺氧多晶硅薄膜退火特性的研究[J]. 华东师范大学学报(自然科学版), 1985, 0(3) |
| |
| 作者姓名： | 王云珍 钮建昌 |
| |
| 作者单位： | 华东师范大学电子科学技术系(王云珍)，华东师范大学电子科学技术系(钮建昌) |
| |
| 摘 要： | 掺氧多晶硅薄膜作为钝化膜已成功地应用于半导体器件.为了适应器件制造过程中的高温热处理,有必要探讨膜的高温热退火物理效应.本文从薄膜的腐蚀速率、膜的厚度以及膜的折射率随不同退火温度的变化,显示了掺氧多晶硅薄膜经高温退火的致密效应.而从膜的红外吸收谱测量表明膜中含氧量基本不变,但Si-O键吸收峰随着退火温度的升高向高频方向移动,并且愈益接近SiO_2的红外吸收谱.由此说明高温热退火使无定形的生长层薄膜再结构为Si多晶颗粒和SiO_2.使膜中SiO_2成份随着退火温度升高也跟着增加.
|
| 关 键 词： | 掺氧多晶硅 退火 含氧量 腐蚀速率 致密性 |
Investigation on Anneal Properties of Oxygen-doped Polycrystalline Silicon |
| |
| WANG YUNZHEN, NIU JIANCHUNG. Investigation on Anneal Properties of Oxygen-doped Polycrystalline Silicon[J]. Journal of East China Normal University(Natural Science), 1985, 0(3) |
| |
| Authors: | WANG YUNZHEN NIU JIANCHUNG |
| |
| Affiliation: | Department of Electronic Science Techniques |
| |
| Abstract: | Here, through the measurements of etch rate, film thickness and refractive index of films, it is shown that the oxygen-doped polycrystalline silicon films have been densified with high temperature annealing.Moreover, infrared spectra of films shows a stable oxygen content and a shift of Si-O band absorption peak to higher frequency with increasing annealing temperature.After high temperature annealing, the infrared spectrum of film is resemble with that of SiO_2.It is concluded that the as-deposited film is reconstructed into polycrystalline grains and SiO_2 during heat annealing, and the SiO_2 component increases with the annealed temperature. |
| |
| Keywords: | polycrystalline silicon doped with oxygen anneal oxygen content etch rate densification. |
| 本文献已被 CNKI 等数据库收录！ |
