| 一种新的HEMT器件I－V特性解析模型 |
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| 引用本文： | 黄艺,沈楚玉.一种新的HEMT器件I－V特性解析模型[J].东南大学学报(自然科学版),1996(4). |
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| 作者姓名： | 黄艺 沈楚玉 |
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| 作者单位： | 东南大学毫米波国家重点实验室 |
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| 基金项目： | 国家“八五”攻关项目资助 |
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| 摘 要： | 提出一种考虑速度过冲效应的ＨＥＭＴ器件Ｉ－Ｖ特性解析模型．在非线性电荷控制模型的基础上，对栅极下面沟道中靠近源端附近的电场采用弱强阶梯场近似，提出了一个半经验的速度过冲模型．经实际计算结果表明，本模型具有比较高的精度
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| 关 键 词： | 电流－电压特性 异质结场效应晶体管 速度过冲 |
A Novel Analytical Current Voltage Characteristics Model for HEMT Devices |
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| Huang Yi,Shen Chuyu.A Novel Analytical Current Voltage Characteristics Model for HEMT Devices[J].Journal of Southeast University(Natural Science Edition),1996(4). |
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| Authors: | Huang Yi Shen Chuyu |
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| Abstract: | A novel analytical current voltage characteristics model including velocity overshoot effect for HEMT devices is presented. Based on a more accurate nonlinear charge control formulation, a new velocity overshoot model is developed by the step field approximation for the electrical field near the source end of the channel. The results compared with the measured data show that this model is suitable for CAD applications of higher accuracy. |
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| Keywords: | current voltage characteristics heterojunction field effect transistor velocity overshoot |
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