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InGaAsP/InP异质界面的X射线双晶衍射测量
引用本文:卢革宇,王贤仁,苗忠礼,程强,关一民. InGaAsP/InP异质界面的X射线双晶衍射测量[J]. 吉林大学学报(理学版), 1993, 0(3)
作者姓名:卢革宇  王贤仁  苗忠礼  程强  关一民
作者单位:吉林大学电子科学系 长春130023(卢革宇,王贤仁,苗忠礼,程强),吉林大学电子科学系 长春130023(关一民)
摘    要:本文利用X射线双晶衍射测量LPE生长的InGaAsP/InP异质结的R-C曲线,得到了异质结的垂直失配和水平失配.在考虑存在失配位错的情况下,计算了驰豫晶格失配、曲率半径和失配位错密度.指出了影响外延层R-C曲线半峰宽的因素.

关 键 词:界面  双晶衍射  磷化铟

The Measurement on the Interface of InGaAsP/InP Research with Double Crystal X-ray Diffraction
Lu Geyu,Wang Xianren,Miao Zhongli,Cheng Qiang,Guan Yimin. The Measurement on the Interface of InGaAsP/InP Research with Double Crystal X-ray Diffraction[J]. Journal of Jilin University: Sci Ed, 1993, 0(3)
Authors:Lu Geyu  Wang Xianren  Miao Zhongli  Cheng Qiang  Guan Yimin
Abstract:The X-ray Rocking Curve of InGaAsP/InP was measured with double crystal X-ray diffraction. The vertical mismatch and parallel mismatch were obtained. In the case of considering the misfit dislocation, relaxed lattice mismatch, the radius of curvature and density of misfit dislocation were calculated. The factors which inflence on the half-width of Rocking curve were given.
Keywords:interface   double crystal diffraction   InP
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