| 金刚石薄膜在Si(100)上的偏压成核与织构生长的研究 |
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| 引用本文： | 戴雯琦,居建华,许俊芬,杨晓晔,夏义本.金刚石薄膜在Si(100)上的偏压成核与织构生长的研究[J].上海大学学报(自然科学版),1999,5(1):4-6. |
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| 作者姓名： | 戴雯琦 居建华 许俊芬 杨晓晔 夏义本 |
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| 作者单位： | 上海大学材料科学与工程学院 |
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| 摘 要： | 通过微波等离子化学气相沉积法（ＭＰＣＶＤ）在镜面抛光Ｓｉ（１００）上生长出高品质的具有（１００）织构的金刚石薄膜．列举了最佳成核与生长条件．ＳＥＭ和Ｒａｍａｎ光谱对所得样品进行了表征，并对偏压的影响及成核生长机制进行了讨论．
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| 关 键 词： | 金刚石薄膜 偏压成核 织构生长 |
| 修稿时间： | 1998-07-01 |
Bias-enhanced Nucleation and Textured Growth of the Diamond Films on Si(100) |
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| Dai Wenqi,Ju Jianhua,Xu Junfen,Yang Xiaoye,Xia Yiben.Bias-enhanced Nucleation and Textured Growth of the Diamond Films on Si(100)[J].Journal of Shanghai University(Natural Science),1999,5(1):4-6. |
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| Authors: | Dai Wenqi Ju Jianhua Xu Junfen Yang Xiaoye Xia Yiben |
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| Abstract: | A (100) texured diamond film on mirror polished Si(100) substrate by biased enhanced microwave plasma CVD has been achieved. The optimized nucleation and growth conditions have been concluded.The film has been characterized by SEM and Raman Spectrum. The influence of the bias and the mechanisms of the nucleation and growth have been investigated. |
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| Keywords: | diamond films biased nucleation texured growth |
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