| pLEDMOS导通电阻及阈值电压的热载流子退化 |
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| 引用本文： | 郑维山,孙虎,刘斯扬,孙伟锋. pLEDMOS导通电阻及阈值电压的热载流子退化[J]. 东南大学学报(自然科学版), 2011, 0(3): 522-525 |
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| 作者姓名： | 郑维山 孙虎 刘斯扬 孙伟锋 |
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| 作者单位： | 南京大学电子科学与工程学院;南京大学江苏省光电信息功能材料重点实验室;东南大学国家ASIC系统工程技术研究中心 |
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| 基金项目： | 国家高技术研究发展计划(863计划)资助项目(2008AA01Z135);国家自然科学基金资助项目(60876017,61006018);江苏省科技支撑计划资助项目(BE2009143) |
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| 摘 要： | 研究了不同漂移区长度及不同栅场极板长度的厚栅氧化层pLEDMOS器件由热载流子效应导致的导通电阻及阈值电压的退化现象及机理.实验结果表明,增加漂移区长度能改善器件的导通电阻的退化,但加速了阈值电压的退化;增加栅场极板长度可以同时改善导通电阻和阈值电压的退化.借助TCAD仿真软件,模拟分析了不同漂移区长度及不同栅场极板长...
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| 关 键 词： | pLEDMOS 热载流子注入 导通电阻 阈值电压 退化 |
On-resistance and threshold voltage hot-carrier degradation of pLEDMOS |
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| Zheng Weishan,Sun Hu,Liu Siyang,Sun Weifeng. On-resistance and threshold voltage hot-carrier degradation of pLEDMOS[J]. Journal of Southeast University(Natural Science Edition), 2011, 0(3): 522-525 |
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| Authors: | Zheng Weishan Sun Hu Liu Siyang Sun Weifeng |
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| Affiliation: | 1School of Electronic Science and Engiceering,Nanjing University,Nanjing 210093,China)(2Key Laboratory of Advanced Photonic and Electronic Materials,Nanjing University,Nanjing 210093,China)(3National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China) |
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| Abstract: | The influence of the different length of the drift region and the field plate upon hot-carrier-Induced on-resistance(Ron) and threshold voltage(Vth) degradation in p-type lateral extended drain MOS(pLEDMOS) transistor with thick gate oxide has been investigated.It is concluded that increasing the length of drift region can reduce the Ron degradation but enhance the Vth degradation.However,increasing the length of field plate can reduce the degradation of both Ron and Vth.The impact ionization rate and perpendicular electronic field of pLEDMOS with the different length of the drift region and the field plate were simulated based on TCAD,the results of which can explain the mechanism of the degradation of pLEDMOS.It is also shown that the optimization of the impact ionization rate and perpendicular electronic field is an effective way to reduce the degradation of pLEDMOS. |
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| Keywords: | p-type lateral extended drain MOS hot-carrier-injection on-resistance threshold voltage degradation |
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