首页 | 本学科首页   官方微博 | 高级检索  
     

高效能半导体器件进展与展望
引用本文:郝跃. 高效能半导体器件进展与展望[J]. 重庆邮电大学学报(自然科学版), 2021, 33(6): 885-890. DOI: 10.3979/j.issn.1673-825X.202109270341
作者姓名:郝跃
作者单位:西安电子科技大学 微电子学院,西安710071
摘    要:随着数字时代的不断发展,中国"3060碳战略"目标的确立,绿色低碳成为我国各行业发展主要导向,其中,高效能半导体器件发展应用成为推动汽车电子、电子信息、大数据中心等领域节能降耗的重要趋势.从硅、锗为代表的传统半导体材料到现在以氮化镓、碳化硅为代表的第三代半导体材料,再到以金刚石、氧化镓为代表的超宽禁带半导体材料,支撑半导体器件的性能不断提升,促进射频通信、高功率器件、照明器件等方面革新发展.主要介绍了宽禁带半导体和超宽禁带半导体的研究进展,分析了高效能半导体在射频通讯、汽车电子、航空航天、新型显示等新兴领域的应用前景,总结了目前超宽禁带半导体发展主要面临的难点问题,结合当前相关的研究成果,展望高效能半导体科研、技术及产业的发展趋势,对于我国半导体科技与产业发展都具有重要的指导意义.

关 键 词:高效能半导体器件  氮化镓  氧化镓
收稿时间:2021-09-27
修稿时间:2021-11-02

Progress and prospect of high-performance semiconductor devices
HAO Yue. Progress and prospect of high-performance semiconductor devices[J]. Journal of Chongqing University of Posts and Telecommunications, 2021, 33(6): 885-890. DOI: 10.3979/j.issn.1673-825X.202109270341
Authors:HAO Yue
Affiliation:School of Microelectronics, Xidian University, Xi''an 710071, P. R. China
Abstract:With the continuous development of the digital age and the establishment of China''s "3060 carbon strategy" goal, the development of various industries in China mainly is directed by the "green and low-carbon". Among them, the development and application of high-performance semiconductor devices has become an important trend to promote energy saving and consumption reduction in automotive electronics, electronic information, big data centers and other fields. From the traditional semiconductor materials represented by silicon and germanium, to the third-generation semiconductor materials represented by gallium nitride and silicon carbide, and then to ultra-wide bandgap semiconductor materials represented by diamond and gallium oxide, they support the continuous improvement of semiconductor devices performance to promote the innovation and development of radio frequency communications, high-power devices, lighting devices, etc. This article mainly introduces the research progress of the wide-bandgap semiconductors and ultra-wide bandgap semiconductors, and analyzes the application prospects of high-performance semiconductors at the emerging fields of radio frequency communications, automotive electronics, aerospace, and new displays, among others. And the main difficulties faced by the development of ultra-wide bandgap semiconductors is summarized. Then the article points out the development trend of high-performance semiconductor scientific research, technology and industry, combined with current related research results, and demonstrates the ultra-wide bandgap semiconductors'' important guiding significance for the development of semiconductor technology and industry in China.
Keywords:high-performance semiconductor devices  gallium nitride  gallium oxide
本文献已被 万方数据 等数据库收录!
点击此处可从《重庆邮电大学学报(自然科学版)》浏览原始摘要信息
点击此处可从《重庆邮电大学学报(自然科学版)》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号