| 一维PN结二极管模拟程序mPND1D |
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| 引用本文： | 余稳,蔡新华,聂建军,黄文华,刘国治.一维PN结二极管模拟程序mPND1D[J].湖南文理学院学报(自然科学版),2000,12(1):40-43. |
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| 作者姓名： | 余稳 蔡新华 聂建军 黄文华 刘国治 |
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| 作者单位： | 常德师范学院科技处!常德415000(余稳，蔡新华，聂建军)，西北核技术研究所!西安710024(黄文华，刘国治) |
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| 摘 要： | 在高功率瞬态源激励下 ,半导体器件的行为可由一组由电子连续性方程、空穴连续性方程和泊松方程等组成的耦合、非线性、刚性偏微分方程来描述。绝大部分的器件模拟程序只适合于器件正常工作模拟。从研究器件的烧毁机理出发 ,自行研制了一套计算机模拟程序mPND1D ,并全面介绍了一这程序。
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| 关 键 词： | 二极管 计算机模拟 有限差分 |
mPND1D-modeling of one-dimensional PN Diode |
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| Yu Wen Cai Xinhua Nie Jianjun Huang Wenhua,Liu Guozhi.mPND1D-modeling of one-dimensional PN Diode[J].Journal of Hunan University of Arts and Science:Natural Science Edition,2000,12(1):40-43. |
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| Authors: | Yu Wen Cai Xinhua Nie Jianjun Huang Wenhua Liu Guozhi |
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| Institution: | Yu Wen Cai Xinhua Nie Jianjun Huang Wenhua 1 Liu Guozhi 1 |
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| Abstract: | When the semi-conductor is stimulated by a high power RF source,its behavior can be desoribed with a set of coupled,nonlinear and stiff partial differential equations which are composed of electron continuous equation,hole continuous equation,heat flow equation etc.Most of the modeling programs available deal only with normal situation.Based on the study of the burnout mechanism of the device,the program mPND1D is developed. |
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| Keywords: | Diode modeling FDTD |
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