| 金属氧化物半导体SnO_x薄膜对NO_x气体敏感性能研究 |
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| 引用本文： | 徐静芳,汤世豪,袁美英,黄保法,俞钟晓. 金属氧化物半导体SnO_x薄膜对NO_x气体敏感性能研究[J]. 上海师范大学学报(自然科学版), 1986, 0(3) |
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| 作者姓名： | 徐静芳 汤世豪 袁美英 黄保法 俞钟晓 |
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| 作者单位： | 华东师范大学电子科学技术系，华东师范大学电子科学技术系，华东师范大学电子科学技术系，华东师范大学电子科学技术系，华东师范大学电子科学技术系 |
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| 摘 要： | 本文研究了用PECVD方法制备的SnO_∞薄膜对NO_2气体的敏感特性。控制薄膜厚度和化学成份可以获得对NO_2气体的高探测灵敏度和快动态响应。工作温度比体型低得多。此外,本文还阐述了SnO_∞薄膜的敏感机制。
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| 关 键 词： | 二氧化锡 二氧化氮 薄膜 敏感 PECVD方法 |
A Research on NO_x Gas Sensitivity of Metal Oxide Semiconductor SnO_x Thin Film |
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| Xu Jingfang Tang Shihao Yuan Meiying Huang Baofa Yu Zhongxiao. A Research on NO_x Gas Sensitivity of Metal Oxide Semiconductor SnO_x Thin Film[J]. Journal of Shanghai Normal University(Natural Sciences), 1986, 0(3) |
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| Authors: | Xu Jingfang Tang Shihao Yuan Meiying Huang Baofa Yu Zhongxiao |
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| Affiliation: | Department of Electronic Science and Technelogy |
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| Abstract: | Thin film of SnO_x are fabricated with PEOVD method. It's sensing characteristics are studied. It is resulted that this film shows high sensitivity and quick kinetio response for deteting NO_2 when film thickness and composition are carefully controlled. Besides, its activating temperature is also lower than that of volume tin oxide. The sensing mechanism of thin film SnO_x is presented as well. |
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| Keywords: | tin oxide nitrogen oxides thin film sensing PECVD method |
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