| 低噪声晶体管放大器的设计 |
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| 引用本文： | 吴兴源 刘中原. 低噪声晶体管放大器的设计[J]. 西南师范大学学报(自然科学版), 1994, 19(2): 139-146 |
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| 作者姓名： | 吴兴源 刘中原 |
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| 作者单位： | 西南师范大学物理系、生物系，大连理工大学物理系 |
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| 摘 要： | 以实现声频放大器低噪声化为出发点，阐述了具体设计的几个方面．从低噪声放大器设计的基本原理和方法入手，对晶体管放大器的噪声模型（Ｅｎ－Ｉｎ模型）作了分析，并推导出一种实用的最佳源电阻Ｒｓｏｐｔ近似求法．还对系统电路的低噪声设计略加探讨．
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| 关 键 词： | 晶体管放大器 低噪声放大器 |
DISIGN OF THE LOW-NOISE TRANSISTOR AMPLIFIER |
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| Wu Xingyuan, Wu Fei. DISIGN OF THE LOW-NOISE TRANSISTOR AMPLIFIER[J]. Journal of southwest china normal university(natural science edition), 1994, 19(2): 139-146 |
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| Authors: | Wu Xingyuan Wu Fei |
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| Abstract: | In order to make the voice amplifier of low noise , details for the concret desigu are explained.Based on the basic principles and approaches for the making of the low-noise amplifier , we analysed the noise model of the transistor amplifier(En- In model) and provided a practical method to get the best source resistant Rsopt. Finally, we also briefly discussed the low noise design of the system circuit. |
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| Keywords: | low noise transistor amplifier noise model best source resistant R_(sopt) noise matching |
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