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Influence of Ga-doping on the thermoelectric properties of Bi(2−x)GaxTe2.7Se0.3 alloy
引用本文:Xingkai Duan,Konggang Hu,Shifeng Ding,Dahu Man,Haixia Jin. Influence of Ga-doping on the thermoelectric properties of Bi(2−x)GaxTe2.7Se0.3 alloy[J]. 自然科学进展(英文版), 2015, 25(1): 29-33
作者姓名:Xingkai Duan  Konggang Hu  Shifeng Ding  Dahu Man  Haixia Jin
摘    要:Bi(2-x)GaxTe2.7Se0.3(x=0, 0.04, 0.08, 0.12) alloys were fabricated by vacuum melting and hot pressing technique. The structure of the samples was evaluated by means of X-ray diffraction. The peak shift toward higher angle can be observed by Ga-doping. The effects of Ga substitution for Bi on the electrical and thermal transport properties were investigated in the temperature range of 300–500 K. The power factor values of the Ga-doped samples are obviously improved in the temperature range of 300–440 K. Among all the samples, the Bi(2-x)GaxTe2.7Se0.3(x=0.04) sample showed the lowest thermal conductivity near room temperature and the maximum ZT value reached 0.82 at 400 K.


Influence of Ga-doping on the thermoelectric properties of Bi_(2-x)Ga_xTe_(2.7)Se_(0.3) alloy
Xingkai Duan,Konggang Hu,Shifeng Ding,Dahu Man and Haixia Jin. Influence of Ga-doping on the thermoelectric properties of Bi_(2-x)Ga_xTe_(2.7)Se_(0.3) alloy[J]. Progress in Natural Science, 2015, 25(1): 29-33
Authors:Xingkai Duan  Konggang Hu  Shifeng Ding  Dahu Man  Haixia Jin
Affiliation:Institute of New Energy Materials, School of Mechanical and Materials Engineering, Jiujiang University, Jiujiang 332005, China;Institute of New Energy Materials, School of Mechanical and Materials Engineering, Jiujiang University, Jiujiang 332006, China;Institute of New Energy Materials, School of Mechanical and Materials Engineering, Jiujiang University, Jiujiang 332007, China;Institute of New Energy Materials, School of Mechanical and Materials Engineering, Jiujiang University, Jiujiang 332008, China;Institute of New Energy Materials, School of Mechanical and Materials Engineering, Jiujiang University, Jiujiang 332009, China
Abstract:
Keywords:Bi2Te2.7Se0.3   Electrical transport properties   Thermal transport properties   Carrier concentration
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