Investigation of the synaptic device based on the resistive switching behavior in hafnium oxide |
| |
Authors: | Bin Gao Lifeng Liu and Jinfeng Kang |
| |
Institution: | Institute of Microelectronics, Peking University, Beijing 100871, China;Institute of Microelectronics, Peking University, Beijing 100872, China;Institute of Microelectronics, Peking University, Beijing 100873, China |
| |
Abstract: | Metal-oxide based electronics synapse is promising for future neuromorphic computation application due to its simple structure and fab-friendly materials. HfOx resistive switching memory has been demonstrated superior performance such as high speed, low voltage, robust reliability, excellent repeatability, and so on. In this work, the HfOx synaptic device was investigated based on its resistive switching phenomenon. HfOx resistive switching device with different electrodes and dopants were fabricated. TiN/Gd:HfOx/Pt stack exhibited the best synaptic performance, including controllable multilevel ability and low training energy consumption. The training schemes for memory and forgetting were developed. |
| |
Keywords: | Hafnium oxide (HfOx) Resistive switching Memristor Multilevel cell (MLC) Synapse |
本文献已被 CNKI 等数据库收录! |
| 点击此处可从《自然科学进展(英文版)》浏览原始摘要信息 |
| 点击此处可从《自然科学进展(英文版)》下载免费的PDF全文 |
|