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与CMOS相容的嵌入式NVM技术
引用本文:步建康,Courtney Parker,William Belcher.与CMOS相容的嵌入式NVM技术[J].世界科技研究与发展,2007,29(1):1-8.
作者姓名:步建康  Courtney Parker  William Belcher
作者单位:美国国家半导体公司
摘    要:嵌入式NVM增强片上系统的功能和灵活性。对只需有限密度有限性能的嵌入式NVM的应用,传统的浮栅/SONOSNVM成本昂贵。与CMOS相容的嵌入式NVM技术是当前工业界的成功解决方案,并在诸如模拟技术微调应用中的位元级一直到数据或代码储存的千位元等级取得越来越广泛的应用。本文描述了与CMOS相容的嵌入式NVM技术的基本原理及特性,并简要介绍了工业界几种具代表性的与CMOS相容的嵌入式NVM技术。本文重点分析了我们在技术研发中遇到的独特的挑战及其解决方案。实验结果证明我们的方案有效地解决了面临的问题。

关 键 词:CMOS相容  氧氮化硅  陷阱辅助隧道效应(TAT)  漏极雪崩热载流子(DAHC)  耐久力

CMOS Compatible Embedded NVM Technology
BU Jiankang,Courtney Parker,William Belcher.CMOS Compatible Embedded NVM Technology[J].World Sci-tech R & D,2007,29(1):1-8.
Authors:BU Jiankang  Courtney Parker  William Belcher
Abstract:Embedded Nonvolatile Semiconductor Memory (NVSM) enhances system-on-chip (SoC) functionality and flexibility. For many applications where only limited amount / limited performance embedded NVSM is needed, traditional Floating Gate or SONOS technology is not cost effective. CMOS compatible NVM is a successful technical solution and is finding increasing applications that range from a few bits in analog trim applications to kilobits for data or code storage. Principles and unique advantages of this technology, comparing with traditional floating gate flash memory, are described in this paper, followed by a review of representative CMOS compatible NVM technologies in industry. Particularly, we discuss the unique challenges and solutions during CMOS compatible NVSM technology development at National Semiconductor. Experiment results demonstrated that the preferred solutions solved the problems successfully.
Keywords:NVM  CMOS compatible  NVM  oxynitride  Trap-Asssited-Tunneling  Drain Avalanche Hot CarTier  endurance
本文献已被 CNKI 维普 万方数据 等数据库收录!
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