| 离子注入拉通雪崩光电二极管的电场模型 |
| |
| 引用本文： | 王德宁,胡维央,水海龙.离子注入拉通雪崩光电二极管的电场模型[J].应用科学学报,1984,2(3):247-252. |
| |
| 作者姓名： | 王德宁 胡维央 水海龙 |
| |
| 作者单位： | 中国科学院上海冶金研究所 |
| |
| 摘 要： | 应用离子注入技术制作n+-p-π-p+拉通型雪崩光电二极管时(Si-RAPD),可以用高斯型杂质分布模型求得到它的电场模型.找到了倍增因子M与电压间关系,详细讨论了电场强度E对击穿电压VB,耗尽层宽度W和有效离化率比值keff等影响.计算值与实测值符合较好.应用本模型,对Si-RAPD进行最佳设计是十分方便的.
|
| 收稿时间： | 1982-07-12 |
THE ELECTRIC FIELD MODEL OF THE REACH-THROUGH SILICON AVALANCHE PHOTODIODES WITH ION IMPLANTATION TYPE OF IMPURITY PROFILES |
| |
| WANG DENING,HU WEIYANG,SHUI HAILONG.THE ELECTRIC FIELD MODEL OF THE REACH-THROUGH SILICON AVALANCHE PHOTODIODES WITH ION IMPLANTATION TYPE OF IMPURITY PROFILES[J].Journal of Applied Sciences,1984,2(3):247-252. |
| |
| Authors: | WANG DENING HU WEIYANG SHUI HAILONG |
| |
| Institution: | Shanghai Institute of Metallurgy, Academia Sinica |
| |
| Abstract: | When the n+-p-π-p+ reach-through silicon avalanche photodiodes (Si-RAPD) was fabricated by the ion implantation technique, it electric field can be obtained by means of the Gassian type impurity profile model. The relation between the multiplication factor M and the voltage V was found. The effects of the electric field strength on the breakdown voltage VB, the depletion layer width W, and the effective ionization coneffioient Keff are discussed in detail. The theoretically calculated results are in good agreement with experimentally measured values. By means of this model, it will be quite convenient to carried out the optimum design of the Si-RAPD. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《应用科学学报》浏览原始摘要信息 |
| 点击此处可从《应用科学学报》下载免费的PDF全文 |
|
