铁磁条对石墨烯中谷依赖电子输运性质的影响

本文建立了铁磁条和硬势垒共同调制下的石墨烯纳米结构模型,计算了铁磁条产生的磁场的大小和铁磁条的宽度对石墨烯中谷依赖的电子输运性质的影响,重点研究了该石墨烯纳米结构中电子的电导和谷极化特征. 数值计算结果表明,该纳米结构中可实现显著的谷极化效应,且磁场的大小和铁磁条的宽度均会对其中的电子电导和谷极化产生较大的影响. 因此,我们可以通过控制铁磁条的宽度和其产生的磁场的大小来获得实际需要的谷极化强度. 这项研究有助于理解和设计谷电子学设备.

Effect of the ferromagnetic stripe on the valley-dependent electron transport properties in graphene

The graphene nanostructure model under the joint modulation of ferromagnetic stripes and hard barriers is established. The effects of the magnitude of magnetic field generated by ferromagnetic stripes and the width of ferromagnetic stripes on the valley-dependent electron transport properties in graphene are calculated, and the electron conductance and the valley polarization in the graphene nanostructure are studied. The numerical results show that the significant valley polarization effect can be realized in such a nanostructure, and the strength of the magnetic field and the width of the ferromagnetic stripes will have a great influence on the electron conductance and valley polarization. Therefore, the valley polarization intensity actually required can be obtained by controlling the width of the ferromagnetic stripes and the strength of the magnetic field generated by it. This study is very helpful for understanding and designing valleytronic devices.