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用RF—PECVD制备的SnO2薄膜光电性质及化学成分
引用本文:陈俊芳 刘彭义. 用RF—PECVD制备的SnO2薄膜光电性质及化学成分[J]. 暨南大学学报(自然科学与医学版), 1999, 20(5): 4-7
作者姓名:陈俊芳 刘彭义
作者单位:[1]华南师范大学物理系 [2]暨南大学物理系
基金项目:广东省自然科学基金;国务院侨办重点学科科研基金
摘    要:利用XPS研究了RF-PECVD制备SnO2薄膜的化学计量配比,测试了SnO2薄膜的光学和电加热特性。结果表明:具有导电性能的SnO2薄膜是一种非理想化学计量配比的氧化物半导体薄膜材料,薄膜还具有较高的可见光透过率和较好的电加热性能。

关 键 词:薄膜 化学计量配比 二氧化锡 PECVD

Study on optical, electrical properties and stoichiometry of SnO 2 thin films by RF-PECVD
CHEN Jun-fang ,LIU Peng-yi. Study on optical, electrical properties and stoichiometry of SnO 2 thin films by RF-PECVD[J]. Journal of Jinan University(Natural Science & Medicine Edition), 1999, 20(5): 4-7
Authors:CHEN Jun-fang   LIU Peng-yi
Affiliation:CHEN Jun-fang 1,LIU Peng-yi 2
Abstract:The SnO 2 thin film was prepared by means of RF-PECVD and its stoichiometric relation is calculated by XPS. Its optical and electric heating properties are measured. The results indicate that this conducting SnO 2 thin film is a kind of non-stoichiometric n-type oxide semiconductor and SnO 2 thin film has high visible light transmittance and good electric heating properties.
Keywords:RF-PECVD  transparent conducting thin film  stoichiometry
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