| 二极管p－n结杂质浓度分布模型改进 |
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| 引用本文： | 李潮锐,刘小伟. 二极管p－n结杂质浓度分布模型改进[J]. 中山大学学报(自然科学版), 2008, 47(3): 37-41 |
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| 作者姓名： | 李潮锐 刘小伟 |
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| 作者单位： | 中山大学物理科学与工程技术学院,广东,广州,510275 |
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| 基金项目： | 国家自然科学基金 , 教育部高等学校博士学科点专项科研基金 |
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| 摘 要： | 简化的突变结或线性缓变结模型已能很好地近似二极管p－n结杂质浓度分布规律，但从精密的实验测量结果中发现传统模型存在局限性。基于随机选取常用产品的C－V实验数据，利用泊松方程并结合提出的改进模型，可以更准确地描述p－n结杂质浓度分布。虽然部分样品C－V关系可由指数1/2或1/3独立表示，但数据拟合分析显示采用指数n=1/2和n=1/3两模型分量共同描述更合理。模型改进可获得更准确的p－n结杂质浓度分布规律及物理参数。
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| 关 键 词： | p－n结 杂质浓度 Ｃ－Ｖ法 泊松方程 |
| 文章编号： | 0529-6579(2008)03-0037-05 |
| 收稿时间： | 2007-09-07; |
| 修稿时间： | 2007-09-07 |
An Improved Model for Analysis on Impurity Distribution in Diode p-n Junction |
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| LI Chao-rui,LIU Xiao-wei. An Improved Model for Analysis on Impurity Distribution in Diode p-n Junction[J]. Acta Scientiarum Naturalium Universitatis Sunyatseni, 2008, 47(3): 37-41 |
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| Authors: | LI Chao-rui LIU Xiao-wei |
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| Affiliation: | (School of Physics and Engineering, Sun Yat sen University,Guangzhou 510275,China) |
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| Abstract: | The impurity concentration distribution in diode p-n junction can be presented with the simplified models, named as abrupt junction and the linearly graded junction, but precise measurements show there existing limitation in these tradition models. Based on capacity voltage experiment data from the most common commercial diodes, the impurity distribution in p-n junction will be described more accurately with use of improved model. Though C－V relation of some samples can be independently expressed with unique component of n=1/2 or n=1/3, others must be explained by the modified model with both of n=1/2 and 1/3 components. The new model provides the method to get more accurate physics parameters for diode p-n junction. |
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| Keywords: | p-n junction impurity concentration capacity voltage method Passion equation |
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