| 喷涂法制备透明导电膜(SnO2:F膜) |
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| 引用本文： | 王福善,李培德. 喷涂法制备透明导电膜(SnO2:F膜)[J]. 应用科学学报, 1986, 4(4): 366-369 |
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| 作者姓名： | 王福善 李培德 |
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| 作者单位： | 中国科学院长春应用化学研究所 |
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| 摘 要： | SnO2:F膜是一种在可见光区具有高透过率,在红外区具有高反射率的大禁带半导体材料,在电子工业和太阳能工业中具有广泛的应用.
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| 收稿时间： | 1983-08-15 |
| 修稿时间： | 1984-05-08 |
SnO2:F THIN FILMS WITH HIGH TRANSPARENCY AND HIGH CONDUCTIVITY PREPARED WITH SPRAY PYROLYSIS METHOD |
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| WANG FUSHAN,LI PEIDE. SnO2:F THIN FILMS WITH HIGH TRANSPARENCY AND HIGH CONDUCTIVITY PREPARED WITH SPRAY PYROLYSIS METHOD[J]. Journal of Applied Sciences, 1986, 4(4): 366-369 |
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| Authors: | WANG FUSHAN LI PEIDE |
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| Affiliation: | Changchun Institute of Applied Chemistry, Academia Sinica |
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| Abstract: | Fluorine-doped conductive SnO2 thin films with high transparency were prepared using spray pyrolysia method. Possessing high transparency and low resistivity, the thin films can be used as window materials in SIS solar cells, and back conductive materials in Cu2S/CdS heterojunotion solar cells. The effects of technical parameters on the properties of the films were investigated. The optimum fabricating the transparent and conductive films was defined. When substrate temperature was 480℃ and fluorine concentration 1.5wt.%,the SnO2 thin films possessed lower square resistance (8Ω/□) and higher transparency (at visible radiation more than 90%). Its merit factor 72×10-3Ω-1 (λ=550nm) proves it is of the advanced level of present days. |
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