| ArF准分子激光晶化非晶硅薄膜微结构研究 |
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| 引用本文： | 黄香平,崔连武,肖金泉,闻火,闻立时.ArF准分子激光晶化非晶硅薄膜微结构研究[J].世界科技研究与发展,2010,32(4):417-419,426. |
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| 作者姓名： | 黄香平 崔连武 肖金泉 闻火 闻立时 |
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| 作者单位： | [1]中南大学物理科学与技术学院,长沙410083 [2]中国科学院金属研究所,沈阳110016 [3]武汉华硅太阳能科技有限责任公司,武汉430074 |
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| 基金项目： | 国家自然科学基金委工程与材料学部青年基金，电子薄膜与集成器件国家重点实验室开放课题 |
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| 摘 要： | 利用ArF准分子激光对非晶硅薄膜的表层进行晶化后,采用拉曼光谱(Raman)、透射电镜(TEM)、场发射扫描电子显微镜(FE-SEM)等实验方法研究不同激光能量密度下晶化层硅薄膜微结构变化。实验结果表明:随激光能量密度的增大,薄膜结晶度增大,晶化层厚度加厚;晶粒尺寸则是先增大,直到激光能量密度增大到210 mJ/cm~2后,晶粒尺寸开始减小并且均匀性逐渐变差。最佳的激光能量密度范围为120～180 mJ/cm~2,这时薄膜表面晶化层晶粒比较均匀致密,薄膜质量较好。
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| 关 键 词： | 准分子激光 激光能量 结晶度 |
Researches on the Microstructure of a-Si Film Crystallized by ArF Excimer Laser |
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| HUANG Xiangping,CUI Lianwu,XIAO Jinquan,WEN Huo,WEN Lishi.Researches on the Microstructure of a-Si Film Crystallized by ArF Excimer Laser[J].World Sci-tech R & D,2010,32(4):417-419,426. |
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| Authors: | HUANG Xiangping CUI Lianwu XIAO Jinquan WEN Huo WEN Lishi |
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| Institution: | 1. School of Physics Science and Technology, Central South University, Changsha 410083 ; 2. Institute of Metal Research, Chinese Academy of Seiences, Shenyang 110016 ; 3. China-Silicon Solar Energy Science and Technology Ltd. ,Wuhan 430074) |
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| Abstract: | ArF excimer laser is used to crystallize the surface layer of a-St thin film. The microstructure variation under different laser fluences is investigated using Raman spectrum, transmission electron microscopy （TEM）, and field emission-scanning electron microscopy （FESEM）. The results indicate that the crystallinity and the thickness of the crystallized surface films increase with laser fluences. The grain size increases with laser fluences below 210 mJ/cm^2 and decreases with homogeneity deteriorating above. The best crystallized surface layer with homogeneous grain size is found to be with the laser fluence in 120 - 180 mJ/cm^2. |
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| Keywords: | excimer laser laser fluence crystallinity |
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