| 掺杂半导体的电离率 |
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| 引用本文： | 马全喜. 掺杂半导体的电离率[J]. 河北大学学报(自然科学版), 1992, 0(2) |
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| 作者姓名： | 马全喜 |
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| 作者单位： | 河北大学物理系 |
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| 摘 要： | 本文从电子占据能级的几率出发,经过严格数学推导,得到了杂质半导体的电离率、电离能、浓度及温度各量关系的一般表达式,并与某些极端条件下的近似结果进行了比较。分析表明,本文得到的表达式具有普遍意义,该关系式对于分析上述各量关系,特别是在非极端条件下,具有实际意义。
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| 关 键 词： | 掺杂半导体 电离率 简并半导体 非简并半导体 |
The Ionizability of Doped Semiconductors |
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| Ma Quanxi. The Ionizability of Doped Semiconductors[J]. Journal of Hebei University (Natural Science Edition), 1992, 0(2) |
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| Authors: | Ma Quanxi |
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| Affiliation: | Department of Physics |
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| Abstract: | In this paper, the general relationship among ionizability, ionization energy, density and temprature in doped semiconductors has been obtained through strict calculation, from the probability of the energy levels occupied by electrons, which fit well with some results obtained under particalar condition.It is shown that our relationship is general.Our relationship is useful for analysing about parameters, especially under non- particular conditions. |
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| Keywords: | Doped semiconductors Ionizability. |
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